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1N5534B

1N5534B

1N5534B

MICROSS/On Semiconductor

100Ohms ±5% 14V 10μA @ 12.6V -65°C~175°C 500mW Die

SOT-23

1N5534B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case Die
Number of Pins 2
Supplier Device Package Die
Operating Temperature-65°C~175°C
PackagingTray
Tolerance ±5%
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature175°C
Min Operating Temperature -65°C
Max Power Dissipation500mW
Impedance101Ohm
Element ConfigurationSingle
Current - Reverse Leakage @ Vr 10μA @ 12.6V
Power Dissipation417mW
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA
Power - Max 500mW
Max Reverse Leakage Current 10nA
Impedance-Max 100Ohms
Test Current 1mA
Voltage - Zener (Nom) (Vz) 14V
Zener Voltage 14V
Voltage Tolerance5%
Radiation HardeningYes
RoHS StatusRoHS Compliant
In-Stock:4663 items

Pricing & Ordering

QuantityUnit PriceExt. Price
25$4.00000$100

1N5534B Product Details

1N5534B Overview


The reverse leakage current for this electrical device is 10μA @ 12.6V.Reverse leakage currents can reach 10nA.In the course of operation, Zener (Nom) drops to zero voltage.This value reaches 1.1V @ 200mA when the maximum Forward voltage (Vf) is applied.

1N5534B Features


reverse leakage current of 10μA @ 12.6V
10μA @ 12.6V is the maximum voltage (Tol)
Reverse leakage current reaches 10nA


1N5534B Applications


There are a lot of MICROSS/On Semiconductor
1N5534B applications of zener single diodes.


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