MS1076 Description
MS1076 developed by Microsemi Corporation is a type of 28-volt epitaxial NPN silicon planar transistor. It is specifically designed for SSB and VHF communications. Maximum ruggedness and reliability can be achieved based on an emitter-ballasted die geometry. Using planar structure and technology, very delicate and complex electrode patterns can be produced, thus opening up a broad way for transistors to develop in the direction of high frequency and high power.
MS1076 Features
Common emitter configuration
Device current: 16A
Power dissipation: 250W
Junction temperature: -65℃~150℃
MS1076 Applications
SSB and VHF communications
