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MDS150

MDS150

MDS150

Microsemi Corporation

Trans GP BJT NPN 55V 10A 3-Pin Case 55AW Style 1

SOT-23

MDS150 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55AW
Number of Pins 55
Transistor Element Material SILICON
Operating Temperature200°C TJ
PackagingBulk
Published 2012
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation350W
Terminal Position DUAL
Terminal FormFLAT
Pin Count3
JESD-30 Code R-PDFM-F3
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Power - Max 350W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Collector Emitter Breakdown Voltage60V
Gain 10dB
Frequency - Transition 1.03GHz~1.09GHz
Collector Base Voltage (VCBO) 55V
Highest Frequency Band L B
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:3507 items

About MDS150

The MDS150 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans GP BJT NPN 55V 10A 3-Pin Case 55AW Style 1.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MDS150, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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