JANTXV2N6385 Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
JANTXV2N6385 Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the supplier device package of TO-204AA (TO-3)
JANTXV2N6385 Applications
There are a lot of Microsemi Corporation JANTXV2N6385 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
