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JAN2N6849U

JAN2N6849U

JAN2N6849U

Microsemi Corporation

Trans MOSFET P-CH 100V 6.5A 18-Pin LCC

SOT-23

JAN2N6849U Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-CLCC
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1997
Series Military, MIL-PRF-19500/564
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Qualification StatusQualified
Power Dissipation-Max 800mW Ta 25W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 320m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:3756 items

About JAN2N6849U

The JAN2N6849U from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET P-CH 100V 6.5A 18-Pin LCC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the JAN2N6849U, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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