JAN2N6351 Overview
In this device, the DC current gain is 1000 @ 5A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.
JAN2N6351 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
JAN2N6351 Applications
There are a lot of Microsemi Corporation JAN2N6351 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
