JAN2N6298 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A 3V DC current gain.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In this part, there is a transition frequency of 4MHz.
JAN2N6298 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JAN2N6298 Applications
There are a lot of Microsemi Corporation JAN2N6298 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
