JAN2N3741 Overview
This device has a DC current gain of 30 @ 250mA 1V, which is the ratio between the collector current and the base current.When VCE saturation is 600mV @ 125mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
JAN2N3741 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
the emitter base voltage is kept at 7V
JAN2N3741 Applications
There are a lot of Microsemi Corporation JAN2N3741 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
