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JAN2N2904A

JAN2N2904A

JAN2N2904A

Microsemi Corporation

JAN2N2904A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N2904A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/290
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation600mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation600mW
Case Connection COLLECTOR
Power - Max 800mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 45ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:646 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$13.74450$1374.45

JAN2N2904A Product Details

JAN2N2904A Overview


In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.When collector current reaches its maximum, it can reach 600mA volts.

JAN2N2904A Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V

JAN2N2904A Applications


There are a lot of Microsemi Corporation JAN2N2904A applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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