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JAN1N756CUR-1

JAN1N756CUR-1

JAN1N756CUR-1

Microsemi Corporation

ZENER DIODE 8Ohm ±2% 1μA @ 6V -65°C~175°C DO-213AA (Glass)

SOT-23

JAN1N756CUR-1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case DO-213AA (Glass)
Diode Element Material SILICON
Operating Temperature-65°C~175°C
PackagingBulk
Series Military, MIL-PRF-19500/127
Published 1999
Tolerance ±2%
JESD-609 Code e0
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.10.00.50
Qualification StatusQualified
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 1μA @ 6V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA
Power - Max 500mW
Impedance-Max 8Ohm
Voltage - Zener (Nom) (Vz) 8.2V
RoHS StatusNon-RoHS Compliant
In-Stock:698 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$9.86000$986

JAN1N756CUR-1 Product Details

JAN1N756CUR-1 Overview


The reverse leakage current needed to power this electric device is 1μA @ 6V.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 8.2V.For its operation, the maximum voltage - Forward (Vf) 1.1V @ 200mA is supplied.

JAN1N756CUR-1 Features


reverse leakage current of 1μA @ 6V
1μA @ 6V is the maximum voltage (Tol)


JAN1N756CUR-1 Applications


There are a lot of Microsemi Corporation
JAN1N756CUR-1 applications of zener single diodes.


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