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APTGL90SK120T1G

APTGL90SK120T1G

APTGL90SK120T1G

Microsemi Corporation

Trans IGBT Module N-CH 1.2KV 110A 10-Pin Case SP-1

SOT-23

APTGL90SK120T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 10
Operating Temperature-40°C~175°C TJ
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation385W
Number of Elements 1
Configuration Single
Power - Max 385W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 110A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance4.4nF
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 75A
IGBT Type Trench Field Stop
NTC ThermistorYes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.4nF @ 25V
VCEsat-Max 2.25 V
RoHS StatusRoHS Compliant
In-Stock:2465 items

About APTGL90SK120T1G

The APTGL90SK120T1G from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Module N-CH 1.2KV 110A 10-Pin Case SP-1.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APTGL90SK120T1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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