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2N6798U

2N6798U

2N6798U

Microsemi Corporation

MOSFET N-CH 200V 18LCC

SOT-23

2N6798U Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-CLCC
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Terminal FormNO LEAD
Pin Count18
JESD-30 Code R-CQCC-N15
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 5.29nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.5A
Drain-source On Resistance-Max 0.42Ohm
DS Breakdown Voltage-Min 200V
RoHS StatusNon-RoHS Compliant
In-Stock:4369 items

About 2N6798U

The 2N6798U from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 18LCC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N6798U, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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