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2N5416UA/TR

2N5416UA/TR

2N5416UA/TR

Microsemi Corporation

POWER BJT

SOT-23

2N5416UA/TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Supplier Device Package UA
Operating Temperature-65°C~200°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 1A
RoHS StatusNon-RoHS Compliant
In-Stock:175 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$51.17000$51.17
500$50.6583$25329.15
1000$50.1466$50146.6
1500$49.6349$74452.35
2000$49.1232$98246.4
2500$48.6115$121528.75

About 2N5416UA/TR

The 2N5416UA/TR from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER BJT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N5416UA/TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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