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1N5814

1N5814

1N5814

Microsemi Corporation

DIODE GEN PURP 100V 20A DO203AA

SOT-23

1N5814 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mounting Type Stud Mount
Package / Case DO-203AA, DO-4, Stud
Supplier Device Package DO-203AA
PackagingBulk
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 100V
Voltage - Forward (Vf) (Max) @ If 950mV @ 20A
Operating Temperature - Junction -65°C~175°C
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 20A
Reverse Recovery Time 35ns
Capacitance @ Vr, F 300pF @ 10V 1MHz
RoHS StatusNon-RoHS Compliant
In-Stock:150 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$35.35500$3535.5

About 1N5814

The 1N5814 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 100V 20A DO203AA.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N5814, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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