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1N5806/TR

1N5806/TR

1N5806/TR

Microsemi Corporation

DIODE GEN PURP 150V 2.5A AXIAL

SOT-23

1N5806/TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Through Hole
Package / Case A, Axial
Supplier Device Package A, Axial
PackagingTape & Reel (TR)
Part StatusActive
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 150V
Voltage - Forward (Vf) (Max) @ If 975mV @ 2.5A
Operating Temperature - Junction -65°C~175°C
Voltage - DC Reverse (Vr) (Max) 150V
Current - Average Rectified (Io) 2.5A
Reverse Recovery Time 25ns
Capacitance @ Vr, F 25pF @ 10V 1MHz
RoHS StatusNon-RoHS Compliant
In-Stock:1465 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.74000$5.74
500$5.6826$2841.3
1000$5.6252$5625.2
1500$5.5678$8351.7
2000$5.5104$11020.8
2500$5.453$13632.5

About 1N5806/TR

The 1N5806/TR from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 150V 2.5A AXIAL.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N5806/TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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