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1N485BUR

1N485BUR

1N485BUR

Microsemi Corporation

DIODE GEN PURP 180V 100MA DO213

SOT-23

1N485BUR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-213AA
Number of Pins 2
PackagingBulk
Published 2004
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature175°C
Min Operating Temperature -65°C
HTS Code8541.10.00.70
Subcategory Rectifier Diodes
Number of Elements 1
Element ConfigurationSingle
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 25nA @ 180V
Voltage - Forward (Vf) (Max) @ If 1V @ 100mA
Forward Current200mA
Operating Temperature - Junction -65°C~175°C
Current - Average Rectified (Io) 100mA DC
Max Reverse Voltage (DC) 180V
Average Rectified Current100mA
Max Repetitive Reverse Voltage (Vrrm) 180V
Peak Non-Repetitive Surge Current 2A
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1536 items

Pricing & Ordering

QuantityUnit PriceExt. Price
192$4.82849$927.07008

About 1N485BUR

The 1N485BUR from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 180V 100MA DO213.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N485BUR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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