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JAN1N5620/TR

JAN1N5620/TR

JAN1N5620/TR

Microsemi

Bag

SOT-23

JAN1N5620/TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 880
Peak Reverse Repetitive Voltage (V) 800
Maximum Continuous Forward Current (A) 1@Ta=55C
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.3@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Temperature Grade Military
Standard Package Name Module
Supplier Package Case A
Mounting Through Hole
Package Length 6.35(Max)
PCB changed 2
Lead Shape Through Hole
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 2.16(Max)
RoHS StatusRoHS non-compliant
In-Stock:1401 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.25000$5.25
500$5.1975$2598.75
1000$5.145$5145
1500$5.0925$7638.75
2000$5.04$10080
2500$4.9875$12468.75

JAN1N5620/TR Product Details

JAN1N5620/TR Overview


According to the datasheets, the peak forward voltage is 1.3@3A volts.RF diode consumes approximately 1@Ta=55C in continuous forward current at any given moment.For operation, a DC reverse voltage less than 880 must be applied.

JAN1N5620/TR Features


the forward peak voltage is 1.3@3A


JAN1N5620/TR Applications


There are a lot of Microsemi
JAN1N5620/TR applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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