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GRP-B-DATA-JANTX1N5809

GRP-B-DATA-JANTX1N5809

GRP-B-DATA-JANTX1N5809

Microsemi

Bag

SOT-23

GRP-B-DATA-JANTX1N5809 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 110
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 0.875@4A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 30
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name Case E
Supplier Package Case E
Mounting Through Hole
Package Length 4.7(Max)
PCB changed 2
Lead Shape Through Hole
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 3.42(Max)
RoHS StatusRoHS non-compliant
In-Stock:5000 items

GRP-B-DATA-JANTX1N5809 Product Details

GRP-B-DATA-JANTX1N5809 Overview


According to the datasheets, the peak forward voltage is 0.875@4A volts.RF diode consumes approximately 6 in continuous forward current at any given moment.For operation, a DC reverse voltage less than 110 must be applied.

GRP-B-DATA-JANTX1N5809 Features


the forward peak voltage is 0.875@4A


GRP-B-DATA-JANTX1N5809 Applications


There are a lot of Microsemi
GRP-B-DATA-JANTX1N5809 applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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