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GRP-ABC-JANTX1N5809US

GRP-ABC-JANTX1N5809US

GRP-ABC-JANTX1N5809US

Microsemi

Bag

SOT-23

GRP-ABC-JANTX1N5809US Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 110
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 0.875@4A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 30
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package E-MELF
Mounting Surface Mount
Package Height 3.76(Max)
Package Length 5.72(Max)
Package Width 3.76(Max)
PCB changed 2
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:4167 items

GRP-ABC-JANTX1N5809US Product Details

GRP-ABC-JANTX1N5809US Overview


According to the datasheets, the peak forward voltage is 0.875@4A volts.RF diode consumes approximately 6 in continuous forward current at any given moment.For operation, a DC reverse voltage less than 110 must be applied.

GRP-ABC-JANTX1N5809US Features


the forward peak voltage is 0.875@4A


GRP-ABC-JANTX1N5809US Applications


There are a lot of Microsemi
GRP-ABC-JANTX1N5809US applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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