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GRP-ABC-JAN1N5802US

GRP-ABC-JAN1N5802US

GRP-ABC-JAN1N5802US

Microsemi

Bag

SOT-23

GRP-ABC-JAN1N5802US Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 60
Peak Reverse Repetitive Voltage (V) 50
Maximum Continuous Forward Current (A) 2.5
Peak Non-Repetitive Surge Current (A) 35
Peak Forward Voltage (V) 0.975
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 25
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
AEC Qualified No
Standard Package Name MELF
Supplier Package A-MELF
Mounting Surface Mount
Package Height 2.62(Max)
Package Length 5.08(Max)
Package Width 2.62(Max)
PCB changed 2
Lead Shape No Lead
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:3804 items

GRP-ABC-JAN1N5802US Product Details

GRP-ABC-JAN1N5802US Overview


The datasheets indicate that the peak forward voltage is 0.975.At any given time, this device consumes about 2.5 continuous forward current.The DC reverse voltage must be less than 60.

GRP-ABC-JAN1N5802US Features


the forward peak voltage is 0.975


GRP-ABC-JAN1N5802US Applications


There are a lot of Microsemi
GRP-ABC-JAN1N5802US applications of RF diodes.


  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes

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