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1N5809E3/TR

1N5809E3/TR

1N5809E3/TR

Microsemi

SOT-23

1N5809E3/TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 110
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 0.875@4A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 30
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Commercial
Supplier Package Case B
Military No
Mounting Through Hole
Package Length 7.62(Max)
PCB changed 2
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 3.61(Max)
RoHS StatusYes with exemptions
In-Stock:1279 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.26000$7.26
500$7.1874$3593.7
1000$7.1148$7114.8
1500$7.0422$10563.3
2000$6.9696$13939.2
2500$6.897$17242.5

1N5809E3/TR Product Details

1N5809E3/TR Overview


Datasheets indicate 0.875@4A as the peak forward voltage.RF diode consumes about 6 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 110 V.

1N5809E3/TR Features


the forward peak voltage is 0.875@4A


1N5809E3/TR Applications


There are a lot of Microsemi
1N5809E3/TR applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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