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MT9VDDT6472HY-335J1

MT9VDDT6472HY-335J1

MT9VDDT6472HY-335J1

Micron Technology Inc.

MODULE DDR SDRAM 512MB 200SODIMM

SOT-23

MT9VDDT6472HY-335J1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 200-SODIMM
Surface MountNO
Number of Pins 200
Published 2003
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 200
ECCN Code EAR99
Max Operating Temperature70°C
Min Operating Temperature 0°C
Additional FeatureAUTO/SELF REFRESH; WD-MAX
HTS Code8542.32.00.36
Technology CMOS
Terminal Position ZIG-ZAG
Number of Functions 1
Supply Voltage 2.5V
Operating Supply Voltage2.5V
Supply Voltage-Max (Vsup) 2.7V
Temperature GradeCOMMERCIAL
Supply Voltage-Min (Vsup) 2.3V
Memory Size512MB
Number of Ports1
Speed 333MT/s
Memory TypeDDR SDRAM
Data Bus Width 72b
Organization 64MX72
Memory Width 72
Memory Density 4831838208 bit
Max Frequency 333MHz
Access ModeSINGLE BANK PAGE BURST
Height Seated (Max) 31.9mm
Length 67.6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4306 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$61.86380$6186.38

About MT9VDDT6472HY-335J1

The MT9VDDT6472HY-335J1 from Micron Technology Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features MODULE DDR SDRAM 512MB 200SODIMM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MT9VDDT6472HY-335J1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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