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MT8KTF51264HZ-1G6E1

MT8KTF51264HZ-1G6E1

MT8KTF51264HZ-1G6E1

Micron Technology Inc.

DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM

SOT-23

MT8KTF51264HZ-1G6E1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 111 Weeks
Contact PlatingTin
Mount Socket
Package / Case 204-SODIMM
Number of Pins 204
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 204
Max Operating Temperature70°C
Min Operating Temperature 0°C
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Supply Voltage 1.35V
Terminal Pitch0.6mm
Operating Supply Voltage1.35V
Number of Elements 8
Temperature GradeCOMMERCIAL
Max Supply Voltage1.45V
Min Supply Voltage1.283V
Memory Size4GB
Speed 1600MT/s
Memory TypeDDR3L SDRAM
Supply Current-Max 1.76mA
Data Bus Width 64b
Organization 512MX64
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.144A
Max Frequency 1.6GHz
I/O Type COMMON
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4565 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$42.41250$4241.25

About MT8KTF51264HZ-1G6E1

The MT8KTF51264HZ-1G6E1 from Micron Technology Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MT8KTF51264HZ-1G6E1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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