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MT53D512M64D4SB-046 XT:E

MT53D512M64D4SB-046 XT:E

MT53D512M64D4SB-046 XT:E

Micron Technology Inc.

Memory IC

SOT-23

MT53D512M64D4SB-046 XT:E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Operating Temperature-30°C~105°C TC
PackagingTray
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology SDRAM - Mobile LPDDR4
Voltage - Supply 1.1V
Memory Size32Gb 512M x 64
Memory TypeVolatile
Clock Frequency 2133MHz
Memory Format DRAM
RoHS StatusROHS3 Compliant
In-Stock:211 items

Pricing & Ordering

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MT53D512M64D4SB-046 XT:E Product Details

MT53D512M64D4SB-046 XT:E Overview


There is a Volatile memory type associated with this device. In addition, memory ics is available in a Tray case as well. There is 32Gb 512M x 64 of memory on the chip. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Due to its wide temperature range of -30°C~105°C TC, this device is well suited to a wide range of applications that require high performance. The device is capable of handling a supply voltage of 1.1V volts. During the rotation of the clock, the ic memory chip is set as 2133MHz.

MT53D512M64D4SB-046 XT:E Features



MT53D512M64D4SB-046 XT:E Applications


There are a lot of Micron Technology Inc. MT53D512M64D4SB-046 XT:E Memory applications.

  • main computer memory
  • eDRAM
  • servers
  • multimedia computers
  • supercomputers
  • DVD disk buffer
  • mainframes
  • Camcorders
  • hard disk drive (HDD)
  • cell phones

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