Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MT53D512M64D4NY-046 XT ES:E

MT53D512M64D4NY-046 XT ES:E

MT53D512M64D4NY-046 XT ES:E

Micron Technology Inc.

Memory IC

SOT-23

MT53D512M64D4NY-046 XT ES:E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Operating Temperature-30°C~105°C TC
PackagingBox
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SDRAM - Mobile LPDDR4
Voltage - Supply 1.1V
Memory Size32Gb 512M x 64
Memory TypeVolatile
Clock Frequency 2133MHz
Memory Format DRAM
In-Stock:1201 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MT53D512M64D4NY-046 XT ES:E Product Details

MT53D512M64D4NY-046 XT ES:E Overview


There is a Volatile memory type associated with this device. You can get memory ics in a Box case. 32Gb 512M x 64 is the chip's memory size. The device uses a mainstream DRAM-format memory. Featuring an extended operating temperature range of -30°C~105°C TC, this device allows it to be used in a variety of demanding applications. It is supplied votage within 1.1V. A clock frequency rotation within 2133MHz is used for the ic memory chip to rotate data.

MT53D512M64D4NY-046 XT ES:E Features



MT53D512M64D4NY-046 XT ES:E Applications


There are a lot of Micron Technology Inc. MT53D512M64D4NY-046 XT ES:E Memory applications.

  • graphics card
  • telecommunications
  • mainframes
  • cell phones
  • nonvolatile BIOS memory
  • supercomputers
  • eSRAM
  • printers
  • personal digital assistants
  • eDRAM

Get Subscriber

Enter Your Email Address, Get the Latest News