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MT53B512M64D4EZ-062 WT ES:B TR

MT53B512M64D4EZ-062 WT ES:B TR

MT53B512M64D4EZ-062 WT ES:B TR

Micron Technology Inc.

Memory IC

SOT-23

MT53B512M64D4EZ-062 WT ES:B TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Operating Temperature-30°C~85°C TC
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology SDRAM - Mobile LPDDR4
Voltage - Supply 1.1V
Memory Size32Gb 512M x 64
Memory TypeVolatile
Clock Frequency 1600MHz
Memory Format DRAM
RoHS StatusROHS3 Compliant
In-Stock:2663 items

Pricing & Ordering

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MT53B512M64D4EZ-062 WT ES:B TR Product Details

MT53B512M64D4EZ-062 WT ES:B TR Overview


Volatile is the type of memory it has. The case comes in the Tape & Reel (TR) style. Memory size on the chip is 32Gb 512M x 64. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. It is supplied votage within 1.1V. It has a clock frequency of 1600MHz.

MT53B512M64D4EZ-062 WT ES:B TR Features



MT53B512M64D4EZ-062 WT ES:B TR Applications


There are a lot of Micron Technology Inc. MT53B512M64D4EZ-062 WT ES:B TR Memory applications.

  • multimedia computers
  • personal digital assistants
  • telecommunications
  • networks
  • cell phones
  • hard disk drive (HDD)
  • printers
  • nonvolatile BIOS memory
  • mainframes
  • supercomputers

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