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MT4HTF6464HY-667E1

MT4HTF6464HY-667E1

MT4HTF6464HY-667E1

Micron Technology Inc.

DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray

SOT-23

MT4HTF6464HY-667E1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 200
Max Operating Temperature70°C
Min Operating Temperature 0°C
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Terminal FormNO LEAD
Supply Voltage 1.8V
Terminal Pitch0.6mm
Reach Compliance Code unknown
Qualification StatusNot Qualified
Operating Supply Voltage1.8V
Number of Elements 4
Temperature GradeCOMMERCIAL
Max Supply Voltage1.9V
Min Supply Voltage1.7V
Memory Size512MB
Speed 667MT/s
Memory TypeDDR2 SDRAM
Clock Frequency 333MHz
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.028A
Max Frequency 667MHz
I/O Type COMMON
Refresh Cycles 8192
RoHS StatusROHS3 Compliant
In-Stock:2559 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$46.49060$4649.06

About MT4HTF6464HY-667E1

The MT4HTF6464HY-667E1 from Micron Technology Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MT4HTF6464HY-667E1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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