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MT29F2T08CUHBBM4-3R:B

MT29F2T08CUHBBM4-3R:B

MT29F2T08CUHBBM4-3R:B

Micron Technology Inc.

Memory IC

SOT-23

MT29F2T08CUHBBM4-3R:B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Operating Temperature0°C~70°C TA
PackagingBulk
Part StatusNot For New Designs
Technology FLASH - NAND
Voltage - Supply 2.5V~3.6V
Memory Size2Tb 256G x 8
Memory TypeNon-Volatile
Clock Frequency 333MHz
Memory Format FLASH
Memory InterfaceParallel
RoHS StatusRoHS Compliant
In-Stock:76 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MT29F2T08CUHBBM4-3R:B Product Details

MT29F2T08CUHBBM4-3R:B Overview


As far as memory types are concerned, Non-Volatile is considered to be its memory type. It is available in a case with a Bulk shape. There is an 2Tb 256G x 8 memory capacity on the chip. As with most mainstream devices, this one uses FLASH-format memory. A wide operating temperature range makes this device ideal for a variety of demanding applications. The device is capable of handling a supply voltage of 2.5V~3.6V volts. There is a clock frequency rotation of the memory within a 333MHz range.

MT29F2T08CUHBBM4-3R:B Features



MT29F2T08CUHBBM4-3R:B Applications


There are a lot of Micron Technology Inc. MT29F2T08CUHBBM4-3R:B Memory applications.

  • eSRAM
  • main computer memory
  • servers
  • networks
  • eDRAM
  • cell phones
  • DVD disk buffer
  • personal digital assistants
  • telecommunications
  • workstations,

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