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MT29F2G08ABBEAH4-IT:E TR

MT29F2G08ABBEAH4-IT:E TR

MT29F2G08ABBEAH4-IT:E TR

Micron Technology Inc.

Memory IC MT29F2G08

SOT-23

MT29F2G08ABBEAH4-IT:E TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Package / Case 63-VFBGA
Operating Temperature-40°C~85°C TA
PackagingTape & Reel (TR)
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 1.7V~1.95V
Base Part Number MT29F2G08
Memory Size2Gb 256M x 8
Memory TypeNon-Volatile
Memory Format FLASH
Memory InterfaceParallel
RoHS StatusROHS3 Compliant
In-Stock:1462 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MT29F2G08ABBEAH4-IT:E TR Product Details

MT29F2G08ABBEAH4-IT:E TR Overview


A Non-Volatile-type memory can be classified as the memory type of this device. Case Tape & Reel (TR) is available. An embedded 63-VFBGA case surrounds memory ics. A memory chip with a capacity of 2Gb 256M x 8 is used on this device. There is a mainstream memory format used by this device, which is called FLASH-format memory. This device has an extended operating temperature range of -40°C~85°C TA, so it's perfect for a wide range of demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V volts. There is a recommendation that Surface Mount mounting type should be used for this product. MT29F2G08, as the device's base part number, is frequently referred in order to select similar parts.

MT29F2G08ABBEAH4-IT:E TR Features


Package / Case: 63-VFBGA

MT29F2G08ABBEAH4-IT:E TR Applications


There are a lot of Micron Technology Inc. MT29F2G08ABBEAH4-IT:E TR Memory applications.

  • personal digital assistants
  • multimedia computers
  • workstations,
  • Cache memory
  • eSRAM
  • networking
  • data buffer
  • supercomputers
  • eDRAM
  • servers

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