Name: MT28EW01GABA1HPC-0SIT
Brand: Micron Technology Inc.
SKU: MT28EW01GABA1HPC-0SIT
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mounting Type	Surface Mount
Package / Case	64-LBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	64
Terminal Finish	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Technology	FLASH - NOR
Voltage - Supply	2.7V~3.6V
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	1mm
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PBGA-B64
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	1Gb 128M x 8 64M x 16
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Access Time	95ns
Memory Format	FLASH
Memory Interface	Parallel
Organization	64MX16
Memory Width	16
Write Cycle Time - Word, Page	60ns
Memory Density	1073741824 bit
Programming Voltage	3V
Height Seated (Max)	1.4mm
Length	13mm
Width	11mm
RoHS Status	ROHS3 Compliant

MT28EW01GABA1HPC-0SIT Product Details

MT28EW01GABA1HPC-0SIT Overview

Non-Volatile is its memory type. The case comes in Tray size. As you can see, it is embedded in 64-LBGA case. There is 1Gb 128M x 8 64M x 16 of memory on the chip. FLASH-format memory is used in this device, which is a mainstream design. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. It is recommended that the mounting type be Surface Mount. The chip contains 64 terminations. There are 1 functions supported by this part as part of the comprehensive working process. A voltage of 3V is required for the operation of this memory device. Nonvolatile memory arrays require 3V programming voltages to change their states.