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M29W512GH7AN6E

M29W512GH7AN6E

M29W512GH7AN6E

Micron Technology Inc.

Memory IC 512 Mb kb 18.4mm mm

SOT-23

M29W512GH7AN6E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724, 18.40mm Width)
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingBulk
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
Terminal Finish MATTE TIN
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3V
Terminal Pitch0.5mm
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G56
Operating Supply Voltage3V
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size512Mb 64M x 8 32M x 16
Memory TypeNon-Volatile
Memory Format FLASH
Memory InterfaceParallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 70ns
Address Bus Width24b
Density 512 Mb
Screening Level AEC-Q100
Access Time (Max) 80 ns
Programming Voltage2.7V
Alternate Memory Width 8
Height Seated (Max) 1.2mm
Length 18.4mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3810 items

Pricing & Ordering

QuantityUnit PriceExt. Price
576$8.22825$4739.472

M29W512GH7AN6E Product Details

M29W512GH7AN6E Overview


There is a memory type Non-Volatile for this type of device. Bulk-cases are available. An embedded 56-TFSOP (0.724, 18.40mm Width) case surrounds memory ics. This chip has an 512Mb 64M x 8 32M x 16 size of memory on it, so a lot of data can be stored on it. Memory data is stored in FLASH-format, which is common in mainstream devices. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. As far as the mounting type is concerned, Surface Mount is recommended. The chip has 56 terminations. This part supports as many as 1 functions for the comprehensive working procedure. Memory devices such as this one are designed to be powered by 3V and should be used as such. This memory's operating supply voltage is 3V. A programming voltage of 2.7V is required to alter the state of certain nonvolatile memory arrays.

M29W512GH7AN6E Features


Package / Case: 56-TFSOP (0.724, 18.40mm Width)
Operating Supply Voltage:3V

M29W512GH7AN6E Applications


There are a lot of Micron Technology Inc. M29W512GH7AN6E Memory applications.

  • cell phones
  • eDRAM
  • graphics card
  • networks
  • networking
  • personal digital assistants
  • telecommunications
  • data buffer
  • main computer memory
  • DVD disk buffer

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