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TP2535N3-G

TP2535N3-G

TP2535N3-G

Microchip Technology

MOSFET (Metal Oxide) P-Channel Bulk 25 Ω @ 100mA, 10V ±20V 125pF @ 25V 350V TO-226-3, TO-92-3 (TO-226AA)

SOT-23

TP2535N3-G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2013
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 25Ohm
Terminal Finish Matte Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Qualification StatusNot Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation740mW
Turn On Delay Time10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Current - Continuous Drain (Id) @ 25°C 86mA Tj
Rise Time10ns
Drain to Source Voltage (Vdss) 350V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) -86mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.086A
Drain to Source Breakdown Voltage -350V
Feedback Cap-Max (Crss) 25 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
RoHS StatusROHS3 Compliant
In-Stock:4137 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.506938$1.506938
10$1.421640$14.2164
100$1.341170$134.117
500$1.265255$632.6275
1000$1.193636$1193.636

TP2535N3-G Product Details

TP2535N3-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 125pF @ 25V.This device has a continuous drain current (ID) of [-86mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-350V, the drain-source breakdown voltage is -350V.A device's drain current is its maximum continuous current, and this device's drain current is 0.086A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 350V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

TP2535N3-G Features


a continuous drain current (ID) of -86mA
a drain-to-source breakdown voltage of -350V voltage
the turn-off delay time is 20 ns
a 350V drain to source voltage (Vdss)


TP2535N3-G Applications


There are a lot of Microchip Technology
TP2535N3-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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