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DL2F100N4S

DL2F100N4S

DL2F100N4S

MagnaChip Semiconductor

SOT-23

DL2F100N4S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 320
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 200
Peak Non-Repetitive Surge Current (A) 1750
Peak Forward Voltage (V) 1.3@100A
Peak Reverse Current (uA) 1000
Maximum Power Dissipation (mW) 350000
Peak Reverse Recovery Time (ns) 120
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 6DM-2
Military No
Mounting Through Hole
Package Height 34
Package Length 66
Package Width 8.15(Max)
PCB changed 6
Part StatusObsolete
Type Switching Diode
Pin Count6
Configuration Dual
RoHS StatusSupplier Unconfirmed
In-Stock:2247 items

DL2F100N4S Product Details

DL2F100N4S Overview


The datasheets state that the peak forward voltage is [email protected] continuous forward current of about 200 can be consumed by this device at any given time.In order to operate, you will need a DC reverse voltage less than 320.

DL2F100N4S Features


the forward peak voltage is 1.3@100A


DL2F100N4S Applications


There are a lot of MagnaChip Semiconductor
DL2F100N4S applications of RF diodes.


  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits

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