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DH2F160N4SE

DH2F160N4SE

DH2F160N4SE

MagnaChip Semiconductor

SOT-23

DH2F160N4SE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 320
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 300
Peak Non-Repetitive Surge Current (A) 2600
Peak Forward Voltage (V) 1.4@160A
Peak Reverse Current (uA) 1000
Peak Reverse Recovery Time (ns) 100
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 175
Supplier Package Case 3DM-2NIE
Military No
Mounting Screw
Package Height 15.6(Max)
Package Length 92
Package Width 27
PCB changed 3
Part StatusObsolete
Type Switching Diode
Pin Count3
Configuration Dual Common Cathode
RoHS StatusSupplier Unconfirmed
In-Stock:4143 items

DH2F160N4SE Product Details

DH2F160N4SE Overview


According to the datasheets, the peak forward voltage is 1.4@160A volts.RF diode consumes approximately 300 in continuous forward current at any given moment.For operation, a DC reverse voltage less than 320 must be applied.

DH2F160N4SE Features


the forward peak voltage is 1.4@160A


DH2F160N4SE Applications


There are a lot of MagnaChip Semiconductor
DH2F160N4SE applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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