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DB2F200N6S

DB2F200N6S

DB2F200N6S

MagnaChip Semiconductor

SOT-23

DB2F200N6S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 480
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 400
Peak Non-Repetitive Surge Current (A) 3300
Peak Forward Voltage (V) 1.7@200A
Peak Reverse Current (uA) 8500
Maximum Power Dissipation (mW) 700000
Peak Reverse Recovery Time (ns) 220
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
AEC Qualified Unknown
Supplier Package Case 5DM-2
Military No
Mounting Screw
Package Height 29.75(Max)
Package Length 93
Package Width 35
PCB changed 3
Part StatusObsolete
Type Switching Diode
Pin Count3
Configuration Dual Common Cathode
RoHS StatusSupplier Unconfirmed
In-Stock:4139 items

DB2F200N6S Product Details

DB2F200N6S Overview


According to the datasheets, the peak forward voltage is 1.7@200A volts.RF diode consumes approximately 400 in continuous forward current at any given moment.For operation, a DC reverse voltage less than 480 must be applied.

DB2F200N6S Features


the forward peak voltage is 1.7@200A


DB2F200N6S Applications


There are a lot of MagnaChip Semiconductor
DB2F200N6S applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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