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DA2F100N12S

DA2F100N12S

DA2F100N12S

MagnaChip Semiconductor

SOT-23

DA2F100N12S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 960
Peak Reverse Repetitive Voltage (V) 1200
Maximum Continuous Forward Current (A) 200
Peak Non-Repetitive Surge Current (A) 2000
Peak Forward Voltage (V) 2.2@100A
Peak Reverse Current (uA) 3000
Maximum Power Dissipation (mW) 300000
Peak Reverse Recovery Time (ns) 130
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 5DM-1
Military No
Mounting Screw
Package Height 22.95(Max)
Package Length 94
Package Width 27.5
PCB changed 3
Part StatusObsolete
Type Switching Diode
Pin Count3
Configuration Dual Common Cathode
RoHS StatusSupplier Unconfirmed
In-Stock:1820 items

DA2F100N12S Product Details

DA2F100N12S Overview


The datasheets state that the peak forward voltage is [email protected] continuous forward current of about 200 can be consumed by this device at any given time.In order to operate, you will need a DC reverse voltage less than 960.

DA2F100N12S Features


the forward peak voltage is 2.2@100A


DA2F100N12S Applications


There are a lot of MagnaChip Semiconductor
DA2F100N12S applications of RF diodes.


  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits

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