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MA4E2502L-1246

MA4E2502L-1246

MA4E2502L-1246

M/A-Com Technology Solutions

Schottky 0.12pF @ 0V 18GHz -40°C~125°C TJ 2 Terminations SILICON BOTTOM Bulk Die

SOT-23

MA4E2502L-1246 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case Die
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-40°C~125°C TJ
PackagingBulk
Published 2009
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.10.00.60
Subcategory Microwave Mixer Diodes
Terminal Position BOTTOM
Pin Count2
Number of Elements 1
Max Current Rating 20mA
Power Dissipation-Max 50mW
Element ConfigurationSingle
Diode Type Schottky
Forward Current20mA
Forward Voltage300mV
Peak Reverse Current10μA
Max Repetitive Reverse Voltage (Vrrm) 5V
Capacitance @ Vr, F 0.12pF @ 0V 18GHz
Operating Frequency-Max 18GHz
Frequency Band KU B
Type of Schottky Barrier LOW BARRIER
Pulsed Input Power-Max 0.1W
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2042 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$2.97250$297.25
300$2.68250$804.75
500$2.40700$1203.5

MA4E2502L-1246 Product Details

MA4E2502L-1246 Overview


RF diode is recommended that the system's forward voltage is kept above 300mV.

MA4E2502L-1246 Features




MA4E2502L-1246 Applications


There are a lot of M/A-Com Technology Solutions
MA4E2502L-1246 applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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