TC58BYG2S0HBAI4 Overview
There is a Non-Volatile memory type associated with this device. It is available in a case with a Tray shape. It is available in 63-VFBGA case. On the chip, there is an 4G 512M x 8 memory, which is the size of the chip's memory. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. The chip contains 63 terminations. The part supports at least 1 functions to ensure a comprehensive working process. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. Its target applications rely heavily on the Benand? series memory devices. A programming voltage of 1.8V is required to change a nonvolatile memory array's state.
TC58BYG2S0HBAI4 Features
Package / Case: 63-VFBGA
TC58BYG2S0HBAI4 Applications
There are a lot of Kioxia America, Inc. TC58BYG2S0HBAI4 Memory applications.
- eDRAM
- eSRAM
- Camcorders
- cell phones
- multimedia computers
- telecommunications
- Cache memory
- personal digital assistants
- personal computers
- embedded logic
