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MMIX1T660N04T4

MMIX1T660N04T4

MMIX1T660N04T4

IXYS

DISC MSFT SMPD PKG-HIPERFETMSFT

SOT-23

MMIX1T660N04T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mounting Type Surface Mount
Package / Case 24-PowerSMD, 21 Leads
Operating Temperature-55°C~175°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 830W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850μ Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 44000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 660A Tc
Gate Charge (Qg) (Max) @ Vgs 860nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
In-Stock:406 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$21.52000$21.52
500$21.3048$10652.4
1000$21.0896$21089.6
1500$20.8744$31311.6
2000$20.6592$41318.4
2500$20.444$51110

About MMIX1T660N04T4

The MMIX1T660N04T4 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features DISC MSFT SMPD PKG-HIPERFETMSFT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MMIX1T660N04T4, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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