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MCB60I1200TZ-TUB

MCB60I1200TZ-TUB

MCB60I1200TZ-TUB

IXYS

SICARBIDE-DISCRETE MOSFET TO-268

SOT-23

MCB60I1200TZ-TUB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature-40°C~175°C TJ
Part StatusActive
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 34m Ω @ 50A, 20V
Vgs(th) (Max) @ Id 4V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds 2790pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 20V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +20V, -5V
In-Stock:107 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$104.335000$104.335
10$98.429245$984.29245
100$92.857779$9285.7779
500$87.601678$43800.839
1000$82.643092$82643.092

About MCB60I1200TZ-TUB

The MCB60I1200TZ-TUB from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features SICARBIDE-DISCRETE MOSFET TO-268.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MCB60I1200TZ-TUB, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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