Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXTQ3N150M

IXTQ3N150M

IXTQ3N150M

IXYS

DISCMOSFET N-CH STD-HIVOLTAGE TO

SOT-23

IXTQ3N150M Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature-55°C~150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 73W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1375pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.83A Tc
Gate Charge (Qg) (Max) @ Vgs 38.6nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:1105 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.53000$7.53
500$7.4547$3727.35
1000$7.3794$7379.4
1500$7.3041$10956.15
2000$7.2288$14457.6
2500$7.1535$17883.75

About IXTQ3N150M

The IXTQ3N150M from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features DISCMOSFET N-CH STD-HIVOLTAGE TO.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTQ3N150M, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News