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IXTP8N65X2

IXTP8N65X2

IXTP8N65X2

IXYS

MOSFET N-CH 650V 8A X2 TO-220

SOT-23

IXTP8N65X2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 8A
RoHS StatusROHS3 Compliant
In-Stock:4434 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.052532$2.052532
10$1.936351$19.36351
100$1.826747$182.6747
500$1.723345$861.6725
1000$1.625797$1625.797

About IXTP8N65X2

The IXTP8N65X2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 650V 8A X2 TO-220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTP8N65X2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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