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IXTP10P50P

IXTP10P50P

IXTP10P50P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 1 Ω @ 5A, 10V ±20V 2840pF @ 25V 50nC @ 10V 500V TO-220-3

SOT-23

IXTP10P50P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PolarP™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 1Ohm
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time28ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -500V
Pulsed Drain Current-Max (IDM) 30A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1133 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.04000$5.04
50$4.05000$202.5
100$3.69000$369
500$2.98800$1494

IXTP10P50P Product Details

IXTP10P50P Overview


A device's maximal input capacitance is 2840pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 52 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP10P50P Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)


IXTP10P50P Applications


There are a lot of IXYS
IXTP10P50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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