IXTN600N04T2 Description
IXTN600N04T2 is a 40V TrenchT2™ GigaMOS™ Power MOSFET. A power MOSFET is a specific metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to the degree that the gate voltage needs to be higher than the voltage under control.
IXTN600N04T2 Features
International Standard Package
miniBLOC, with Aluminium Nitride Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~ z High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
IXTN600N04T2 Applications
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High-Speed Power Switching Applications
