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IXTK3N250L

IXTK3N250L

IXTK3N250L

IXYS

MOSFET DISCRETE TO-264K

SOT-23

IXTK3N250L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Operating Temperature-55°C~150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 417W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drain to Source Voltage (Vdss) 2500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:141 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$61.762817$61.762817
10$58.266809$582.66809
100$54.968688$5496.8688
500$51.857252$25928.626
1000$48.921937$48921.937

About IXTK3N250L

The IXTK3N250L from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET DISCRETE TO-264K.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTK3N250L, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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