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IXTH1N170DHV

IXTH1N170DHV

IXTH1N170DHV

IXYS

MOSFET N-CH

SOT-23

IXTH1N170DHV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 290W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16 Ω @ 500mA, 0V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tj
Gate Charge (Qg) (Max) @ Vgs 47nC @ 5V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
FET Feature Depletion Mode
In-Stock:443 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.933780$13.93378
10$13.145075$131.45075
100$12.401014$1240.1014
500$11.699070$5849.535
1000$11.036859$11036.859

About IXTH1N170DHV

The IXTH1N170DHV from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTH1N170DHV, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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