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IXTH06N220P3HV

IXTH06N220P3HV

IXTH06N220P3HV

IXYS

MOSFET N-CH

SOT-23

IXTH06N220P3HV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 104W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 600mA Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Drain to Source Voltage (Vdss) 2200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:1966 items

Pricing & Ordering

QuantityUnit PriceExt. Price
30$15.54000$466.2

About IXTH06N220P3HV

The IXTH06N220P3HV from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTH06N220P3HV, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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