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IXTA36P15P

IXTA36P15P

IXTA36P15P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IXTA36P15P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PolarP™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time31ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 90A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1243 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.445870$5.44587
10$5.137612$51.37612
100$4.846804$484.6804
500$4.572457$2286.2285
1000$4.313639$4313.639

IXTA36P15P Product Details

IXTA36P15P Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -150V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 90A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA36P15P Features


a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
a 150V drain to source voltage (Vdss)


IXTA36P15P Applications


There are a lot of IXYS
IXTA36P15P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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