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IXTA1R4N100PTRL

IXTA1R4N100PTRL

IXTA1R4N100PTRL

IXYS

DISC MOSFET N-CH STD-POLAR TO-26

SOT-23

IXTA1R4N100PTRL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 63W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.8 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:3151 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.03000$2.03
500$2.0097$1004.85
1000$1.9894$1989.4
1500$1.9691$2953.65
2000$1.9488$3897.6
2500$1.9285$4821.25

About IXTA1R4N100PTRL

The IXTA1R4N100PTRL from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features DISC MOSFET N-CH STD-POLAR TO-26.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTA1R4N100PTRL, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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