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FZ1800R12KF4NOSA1

FZ1800R12KF4NOSA1

FZ1800R12KF4NOSA1

Infineon Technologies AG

FZ1800R12KF4NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

SOT-23

FZ1800R12KF4NOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum Collector-Emitter Voltage (V) 1200
Typical Collector Emitter Saturation Voltage (V) 2.7
Maximum Gate Emitter Voltage (V) ±20
Maximum Power Dissipation (mW) 11000
Maximum Continuous Collector Current (A) 1800
Maximum Gate Emitter Leakage Current (uA) 0.4
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Supplier Package IHM190-2
Military No
Mounting Screw
Package Height 38
Package Length 190
Package Width 140
PCB changed 9
PackagingTray
Part StatusObsolete
Pin Count9
Configuration Triple Common Emitter Common Gate
Channel Type N
RoHS StatusRoHS non-compliant
In-Stock:1379 items

About FZ1800R12KF4NOSA1

The FZ1800R12KF4NOSA1 from Infineon Technologies AG is a high-performance microcontroller designed for a wide range of embedded applications. This component features FZ1800R12KF4NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FZ1800R12KF4NOSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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